Tunable Current Regulative Diode Based on Van der Waals Stacked MoS2/WSe2 Heterojunction–Channel Field‐Effect Transistor

Abstract Field‐effect transistors (FETs) are the main building block of microelectronic devices. For most of the FETs, the conduction channel relies on either n‐type or p‐type semiconductor materials. Recent advances in 2D materials offer an opportunity to form van der Waals heterojunction‐based FET...

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Hauptverfasser:	Liwei Liu, Chunsen Liu, Xiaohe Huang, Senfeng Zeng, ZhaoWu Tang, David Wei Zhang, Peng Zhou
Format:	Artigo
Sprache:	Inglês
Veröffentlicht:	Wiley-VCH 2022-04-01
Schriftenreihe:	Advanced Electronic Materials
Schlagworte:	current regulative diode field‐effect transistor Fowler–Nordheim tunneling MoS 2/WSe 2 heterojunction–channel reverse rectification
Online-Zugang:	https://doi.org/10.1002/aelm.202100869
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