High-efficiency deflection of high energy protons due to channeling along the 〈110〉 axis of a bent silicon crystal

A deflection efficiency of about 61% was observed for 400 GeV/c protons due to channeling, most strongly along the 〈110〉 axis of a bent silicon crystal. It is comparable with the deflection efficiency in planar channeling and considerably larger than in the case of the 〈111〉 axis. The measured proba...

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Huvudupphov:	W. Scandale, G. Arduini, M. Butcher, F. Cerutti, M. Garattini, S. Gilardoni, A. Lechner, A. Masi, D. Mirarchi, S. Montesano, S. Redaelli, R. Rossi, G. Smirnov, D. Breton, L. Burmistrov, V. Chaumat, S. Dubos, J. Maalmi, V. Puill, A. Stocchi, E. Bagli, L. Bandiera, G. Germogli, V. Guidi, A. Mazzolari, S. Dabagov, F. Murtas, F. Addesa, G. Cavoto, F. Iacoangeli, F. Galluccio, A.G. Afonin, Yu.A. Chesnokov, A.A. Durum, V.A. Maisheev, Yu.E. Sandomirskiy, A.A. Yanovich, A.D. Kovalenko, A.M. Taratin, A.S. Denisov, Yu.A. Gavrikov, Yu.M. Ivanov, L.P. Lapina, L.G. Malyarenko, V.V. Skorobogatov, T. James, G. Hall, M. Pesaresi, M. Raymond
Materialtyp:	Artigo
Språk:	Inglês
Utgiven:	Elsevier 2016-09-01
Serie:	Physics Letters B
Ämnen:	Crystal Channeling Beam deflection
Länkar:	http://www.sciencedirect.com/science/article/pii/S0370269316304130
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