Demonstration of HfO<sub>2</sub>-Based Gate Dielectric With ~0.8-nm Equivalent Oxide Thickness on Si<sub>0.8</sub>Ge<sub>0.2</sub> by Trimethylaluminum Pre-Treatment and Al Scavenger
We disclosed HfO2-based dielectric of superb electrical properties on p-type Si0.8Ge0.2 substrate using an interfacial layer (IL) formed by trimethylaluminum (TMA) pre-treatment and Al scavenger. Our results revealed that the interface trap density (Dit) value and the gate leakage current (JG) could...
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| Principais autores: | , , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
IEEE
2023-01-01
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| coleção: | IEEE Journal of the Electron Devices Society |
| Assuntos: | |
| Acesso em linha: | https://ieeexplore.ieee.org/document/10109810/ |
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