Review of semiconductor devices and other power electronics components at cryogenic temperature

With the increasing demand for high power density, and to meet extreme working conditions, research has been focused on investigating the performance of power electronics devices at cryogenic temperatures. The aim of this paper is to review the performance of power semiconductor devices, passive com...

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Bibliografische Detailangaben

Hauptverfasser:	Yuchuan Liao, Abdelrahman Elwakeel, Yudi Xiao, Rafael Peña Alzola, Min Zhang, Weijia Yuan, Alfonso J. Cruz Feliciano, Lukas Graber
Format:	Artigo
Sprache:	Inglês
Veröffentlicht:	Tsinghua University Press 2024-06-01
Schriftenreihe:	iEnergy
Schlagworte:	cryogenic power electronics metal–oxide–semiconductor field-effect transistor (mosfet) insulated-gate bipolar transistor (igbt) gate driver
Online-Zugang:	https://www.sciopen.com/article/10.23919/IEN.2024.0014
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