XOR gate design in QCA nanotechnology using cell translation method
Abstract Conventional metal oxide semiconductor field-effect transistor (MOSFET) devices exhibit short-channel issues and struggle to scale down their dimensions in the ultra-nanoscale regime. To continue the development in the electronics industry, it is needed to shift the conventional transistor...
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| Formato: | Artigo |
| Lenguaje: | Inglês |
| Publicado: |
Springer
2025-11-01
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| Colección: | Discover Electronics |
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| Acceso en línea: | https://doi.org/10.1007/s44291-025-00129-z |
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