Engineering Electrical Transport by Implantation‐Induced Defects in CrN Films Without Affecting Thermal Conductivity

Abstract The transport properties of CrN thin films deposited on sapphire have been tailored through structural modifications induced by cumulative argon implantation. As‐grown samples experience the typical structural transition in CrN films from orthorhombic at low temperature to cubic above the N...

Täydet tiedot

Bibliografiset tiedot

Päätekijät:	Hugo Bouteiller, Charlotte Poterie, Razvan Burcea, Danièle Fournier, Younès Ezzahri, Sylvain Dubois, Per Eklund, Arnaud le Febvrier, Jean‐François Barbot
Aineistotyyppi:	Artigo
Kieli:	Inglês
Julkaistu:	Wiley-VCH 2025-11-01
Sarja:	Advanced Materials Interfaces
Aiheet:	defects electrical properties ion implantation thin films thermal conductivity
Linkit:	https://doi.org/10.1002/admi.202500436
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