Active elimination of DC bias current of a SiC based dual active bridge by controlling the dead time period

Abstract Dual active bridge (DAB) is an isolated DC‐DC converter gaining wider attention in power electronics applications. The high frequency (HF) transformer is an integral part of the DAB which is prone to saturation. Silicon carbide (SiC) based DAB are generally preferred for highly efficient po...

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Principais autores:	Ganesan Perumal, Kamalesh Hatua, Manju Rajagopal
פורמט:	Artigo
שפה:	Inglês
יצא לאור:	Wiley 2024-11-01
סדרה:	IET Power Electronics
נושאים:	AC–DC power convertors DC–AC power convertors DC–DC power convertors
גישה מקוונת:	https://doi.org/10.1049/pel2.12753
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