Comparison I-V Characteristics of Sb/c-Si and Al/c-Si Junction
Hetero junctions are fabricated by depositing antimony (Sb) and Al films on n-type single crystal(c-Si) wafers by the method of vacuum evaporation with thickness (0.25µm), with rate of deposition equals to 2.77 Å/sec, all samples are annealed in a vacuum for one hour at 473K. The tests have sho...
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| Hauptverfasser: | , , |
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| Format: | Artigo |
| Sprache: | Inglês |
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University of Baghdad
2017-04-01
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| Schriftenreihe: | Ibn Al-Haitham Journal for Pure and Applied Sciences |
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| Online-Zugang: | https://jih.uobaghdad.edu.iq/index.php/j/article/view/515 |
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