Time‐Domain Content‐Addressable Memory Based on Single Ambipolar Ferroelectric Memcapacitor for High‐Density and Highly‐Precise Distance Function Computation

Abstract Single ambipolar ferroelectric memcapacitor‐based time‐domain (TD) content‐addressable memory (CAM) is proposed and experimentally demonstrated. The proposed TD CAM design effectively resolves the critical challenges of limited integration density and computational reliability in convention...

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Автори:	Minjeong Ryu, Jae Seung Woo, Yeonwoo Kim, Joo Hyeon Jeon, Sung In Cho, Woo Young Choi
Формат:	Artigo
Мова:	Inglês
Опубліковано:	Wiley-VCH 2025-12-01
Серія:	Advanced Electronic Materials
Предмети:	ambipolar memcapacitor capacitive in‐memory computing ferroelectric memcapacitor time‐domain (TD) content‐addressable memory (CAM)
Онлайн доступ:	https://doi.org/10.1002/aelm.202500421
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