An Empirical Modeling of Gate Voltage-Dependent Behaviors of Amorphous Oxide Semiconductor Thin-Film Transistors including Consideration of Contact Resistance and Disorder Effects at Room Temperature

In this paper, we present an empirical modeling procedure to capture gate bias dependency of amorphous oxide semiconductor (AOS) thin-film transistors (TFTs) while considering contact resistance and disorder effects at room temperature. From the measured transfer characteristics of a pair of TFTs wh...

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Bibliografische Detailangaben

1. Verfasser:	Sungsik Lee
Format:	Artigo
Sprache:	Inglês
Veröffentlicht:	MDPI AG 2021-12-01
Schriftenreihe:	Membranes
Schlagworte:	amorphous oxide semiconductor thin-film transistor degree of disorder bias-dependent contact resistance compact transistor model empirical modeling
Online-Zugang:	https://www.mdpi.com/2077-0375/11/12/954
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