Formation of a Thin Continuous GaSb Film on Si(001) by Solid Phase Epitaxy
Nanocrystalline GaSb films were grown on Si(001) from the stoichiometric Ga⁻Sb mixture using solid-phase epitaxy at temperatures of 200⁻500 °C. Use of the solid-phase epitaxy method allowed the suppression of Ga surface diffusion and prevention of intense Sb desorption. At the annea...
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| Principais autores: | , , , , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
MDPI AG
2018-11-01
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| coleção: | Nanomaterials |
| Assuntos: | |
| Acesso em linha: | https://www.mdpi.com/2079-4991/8/12/987 |
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