TCAD Modeling of Resistive-Switching of HfO2 Memristors: Efficient Device-Circuit Co-Design for Neuromorphic Systems
In neuromorphic computing, memristors (or “memory resistors”) have been primarily studied as key elements in artificial synapse implementations, where the memristor provides a variable weight with intrinsic long-term memory capabilities, based on its modifiable resistive-switching characteristics. H...
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| Autori principali: | , , , , , |
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| Natura: | Artigo |
| Lingua: | Inglês |
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Frontiers Media S.A.
2021-10-01
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| Serie: | Frontiers in Nanotechnology |
| Soggetti: | |
| Accesso online: | https://www.frontiersin.org/articles/10.3389/fnano.2021.734121/full |
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