Suppression of (0001) plane emission in GaInN/GaN multi-quantum nanowires for efficient micro-LEDs

GaInN/GaN multi-quantum-shell (MQS) nanowires (NWs) are gaining increasing attention as promising materials for developing highly efficient long-wavelength micro-light emitting diodes (LEDs). To improve the emission properties in GaInN/GaN MQS NWs, it is necessary to suppress the emission from the (...

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Detalhes bibliográficos

Principais autores:	Katsuro Sae, Lu Weifang, Ito Kazuma, Nakayama Nanami, Yamamura Shiori, Jinno Yukimi, Inaba Soma, Shima Ayaka, Sone Naoki, Han Dong-Pyo, Huang Kai, Iwaya Motoaki, Takeuchi Tetsuya, Kamiyama Satoshi
Formato:	Artigo
Idioma:	Inglês
Publicado em:	Wiley 2022-09-01
coleção:	Nanophotonics
Assuntos:	(0001)-plane emission dry etching gainn/gan micro-led multi-quantum-shell nanowire
Acesso em linha:	https://doi.org/10.1515/nanoph-2022-0388
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