Fabrication and Characterization of Nanonet-Channel LTPS TFTs Using a Nanosphere-Assisted Patterning Technique

We present the fabrication and electrical characteristics of nanonet-channel (NET) low-temperature polysilicon channel (LTPS) thin-film transistors (TFTs) using a nanosphere-assisted patterning (NAP) technique. The NAP technique is introduced to form a nanonet-channel instead of the electron beam li...

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Bibliographic Details

Main Authors:	Gilsang Yoon, Donghoon Kim, Iksoo Park, Bo Jin, Jeong-Soo Lee
Format:	Artigo
Language:	Inglês
Published:	MDPI AG 2021-06-01
Series:	Micromachines
Subjects:	grain boundary traps polysilicon nanonet-channel nanosphere-assisted patterning thin-film transistors
Online Access:	https://www.mdpi.com/2072-666X/12/7/741
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