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Dendritic Growth in Si<sub>1−x</sub>Ge<sub>x</sub> Melts

We investigated the types of dendrites grown in Si<sub>1−x</sub>Ge<sub>x</sub> (0 < <i>x</i> < 1) melts, and also investigated the initiation of dendrite growth during unidirectional growth of Si<sub>1-x</sub>Ge<sub>x</sub> alloys. Si<sub>1−x</sub>Ge<sub>x</sub> (0 < <i>x</i> < 1) is a semiconductor...

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Principais autores: Genki Takakura, Mukannan Arivanandhan, Kensaku Maeda, Lu-Chung Chuang, Keiji Shiga, Haruhiko Morito, Kozo Fujiwara
格式: Artigo
語言:Inglês
出版: MDPI AG 2021-06-01
叢編:Crystals
主題:
dendritic growth
crystal/melt interface
semiconductor
在線閱讀:https://www.mdpi.com/2073-4352/11/7/761
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