Robust Bidirectional Gate Driver on Array Based on Indium Gallium Zinc Oxide Thin-Film Transistor for In-Cell Touch Displays

In this paper, we propose a bidirectional gate driver on array (GOA) circuit design based on indium gallium zinc oxide (IGZO) thin-film transistor (TFT) to support time-division driving method (TDDM) for in-cell touch displays. The proposed circuit allows the touch panel to pause the display for tou...

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Autors principals:	Liufei Zhou, Fuchao He, Xiaojun Guo, Haihong Wang, Mingxin Wang, Yuning Zhang, Baoping Wang
Format:	Artigo
Idioma:	Inglês
Publicat:	IEEE 2024-01-01
Col·lecció:	IEEE Journal of the Electron Devices Society
Matèries:	In-cell touch indium gallium zinc oxide thin-film transistor gate driver on array threshold voltage
Accés en línia:	https://ieeexplore.ieee.org/document/10559899/
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