Large Single‐Crystalline n‐Type SnS Flakes by Vapor Transport Growth With In Situ Bi Doping

Doping is a primary design parameter in semiconductor devices. Whereas traditional materials, such as Si, Ge, and GaAs, benefit from facile ambipolar substitutional doping by shallow donors and acceptors, many compound semiconductors are strongly auto‐doped by native point defects. Layered Sn monoch...

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Detalles Bibliográficos

Autores principales:	Eli Sutter, Hannu‐Pekka Komsa, Peter Sutter
Formato:	Artigo
Lenguaje:	Inglês
Publicado:	Wiley-VCH 2026-08-01
Colección:	Small Structures
Materias:	crystal growth doping electronics Hall effect materials science optoelectronics
Acceso en línea:	https://doi.org/10.1002/sstr.70582
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