Performance Projection of Vacuum Gate Dielectric Doping-Free Carbon Nanoribbon/Nanotube Field-Effect Transistors for Radiation-Immune Nanoelectronics

This paper investigates the performance of vacuum gate dielectric doping-free carbon nanotube/nanoribbon field-effect transistors (VGD-DL CNT/GNRFETs) via computational analysis employing a quantum simulation approach. The methodology integrates the self-consistent solution of the Poisson solver wit...

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Detalhes bibliográficos

Principais autores:	Khalil Tamersit, Abdellah Kouzou, José Rodriguez, Mohamed Abdelrahem
Formato:	Artigo
Idioma:	Inglês
Publicado em:	MDPI AG 2024-06-01
Colecção:	Nanomaterials
Assuntos:	vacuum radiation hardness carbon nanotube (CNT) graphene nanoribbon (GNR) field-effect transistor (FET) tunnel FET (TFET)
Acesso em linha:	https://www.mdpi.com/2079-4991/14/11/962
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