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Progress in Spin Logic Devices Based on Domain-Wall Motion

Spintronics, utilizing both the charge and spin of electrons, benefits from the nonvolatility, low switching energy, and collective behavior of magnetization. These properties allow the development of magnetoresistive random access memories, with magnetic tunnel junctions (MTJs) playing a central ro...

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Autores principales: Bob Bert Vermeulen, Bart Sorée, Sebastien Couet, Kristiaan Temst, Van Dai Nguyen
Formato: Artigo
Lenguaje:Inglês
Publicado: MDPI AG 2024-05-01
Colección:Micromachines
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Acceso en línea:https://www.mdpi.com/2072-666X/15/6/696
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