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Modeling of nanoheterojunction betavoltaic cell on GaN and GaP with Si and 3C-SiC/Si

In this paper, the electrophysical properties and efficiency of energy converters — betavoltaic elements, which contain a GaN and GaP heterojunction on Si and 3C-SiC/Si substrates, are modeled. For conversion into electrical energy, external 63Ni or internal 14C radioactive sources with a test speci...

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Bibliografiske detaljer
Principais autores: Mikhail V. Dolgopolov, Alexander S. Chipura
Format: Artigo
Sprog:Inglês
Udgivet: Samara National Research University 2023-12-01
Serier:Вестник Самарского университета: Естественнонаучная серия
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Online adgang:https://journals.ssau.ru/est/article/viewFile/27152/10349
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