Modeling of nanoheterojunction betavoltaic cell on GaN and GaP with Si and 3C-SiC/Si

In this paper, the electrophysical properties and efficiency of energy converters — betavoltaic elements, which contain a GaN and GaP heterojunction on Si and 3C-SiC/Si substrates, are modeled. For conversion into electrical energy, external 63Ni or internal 14C radioactive sources with a test speci...

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Bibliografiske detaljer

Principais autores:	Mikhail V. Dolgopolov, Alexander S. Chipura
Format:	Artigo
Sprog:	Inglês
Udgivet:	Samara National Research University 2023-12-01
Serier:	Вестник Самарского университета: Естественнонаучная серия
Fag:	analytical modeling nanoheterojunction heterostructure gallium nitride gallium phosphide betavoltaic element betavoltaic converter nickel-63 radionuclide carbon-14 radionuclide radioactivity density betavoltaic battery
Online adgang:	https://journals.ssau.ru/est/article/viewFile/27152/10349
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