The effect of low Al concentration on the electronic structure and thermoelectric properties of AlxGa1−xN/GaN heterojunctions

Abstract The effect of low Al concentrations on the electronic structure and thermoelectric properties of AlxGa1−xN/GaN (x = 0.1250, 0.1875, 0.2500, and 0.3125) heterojunctions was investigated using density functional theory and Boltzmann transport theory. Compared to AlxGa1−xN/GaN heterojunctions...

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Detalhes bibliográficos

Principais autores:	Jiaming Qi, Chunyan Song, Hui Liao, Ningxuan Yang, Rui Wang, Jiuming Wang, Boyang Huang, Junjie Guo, Zihan Huang
Formato:	Artigo
Idioma:	Inglês
Publicado em:	Nature Portfolio 2025-10-01
Colecção:	Scientific Reports
Assuntos:	AlxGa1−xN/GaN heterojunctions First principles Electronic structure Thermoelectric properties
Acesso em linha:	https://doi.org/10.1038/s41598-025-20741-z
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