Crossover between intrinsic and temperature-assisted regimes in spin-orbit torque switching of antiferromagnetic order
Abstract Intensive studies have been made on antiferromagnets as candidate materials for next-generation memory bits due to their ultrafast dynamics reaching picosecond time scales. Recent demonstrations of electrical bidirectional switching of antiferromagnetic states have attracted significant att...
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| Principais autores: | , , , , , , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Nature Portfolio
2026-07-01
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| coleção: | Nature Communications |
| Acesso em linha: | https://doi.org/10.1038/s41467-026-74311-6 |
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