Revisiting the Modeling of the Conversion Gain of CMOS Image Sensors with a New Stochastic Approach
A stochastic model for characterizing the conversion gain of Active Pixel Complementary metal–oxide–semiconductor (CMOS) image sensors (APS) with at least four transistors is presented. This model, based on the fundamental principles of electronic noise, may provide a reliable calibration of the gai...
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| Autori principali: | , , |
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| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
MDPI AG
2022-10-01
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| Serie: | Sensors |
| Soggetti: | |
| Accesso online: | https://www.mdpi.com/1424-8220/22/19/7620 |
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