Influence of the channel electric field distribution on the polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors
Using the Quasi-Two-Dimensional (quasi-2D) model, the current-voltage (I-V) characteristics of AlGaN/AlN/GaN heterostructure field-effect transistors (HFETs) with different gate length were simulated based on the measured capacitance-voltage (C-V) characteristics and I-V characteristics. By analyzin...
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| Hlavní autoři: | , , , , , , , |
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| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
AIP Publishing LLC
2013-09-01
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| Edice: | AIP Advances |
| On-line přístup: | http://dx.doi.org/10.1063/1.4821547 |
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