Impact of Solid-State Charge Injection on Spectral Photoresponse of NiO/Ga₂O₃ p–n Heterojunction

Forward bias hole injection from 10-nm-thick p-type nickel oxide layers into 10-μm-thick n-type gallium oxide in a vertical NiO/Ga₂O₃ p–n heterojunction leads to enhancement of photoresponse of more than a factor of 2 when measured from this junction. While it takes only 600 s...

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Auteurs principaux:	Alfons Schulte, Sushrut Modak, Yander Landa, Atman Atman, Jian-Sian Li, Chao-Ching Chiang, Fan Ren, Stephen J. Pearton, Leonid Chernyak
Format:	Artigo
Langue:	Inglês
Publié:	MDPI AG 2023-12-01
Collection:	Condensed Matter
Sujets:	gallium oxide spectral photoresponse minority carriers
Accès en ligne:	https://www.mdpi.com/2410-3896/8/4/106
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