A comprehensive review of suitable interfacial insulating layer selection, I-V characteristics and working parameters in MIS structured Schottky diodes for multifunctional optoelectronic applications

Abstract Schottky Barrier diode (SBD) with Metal- Insulator- Semiconductor (MIS) structure is an important functional part for a broad spectrum of optoelectronic applications. This review paper illustrates the developments in the field of MIS structured SBDs that offers enhanced performance and swit...

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Päätekijät:	K. U. Aiswarya, K. J. Arun, M. D. Aggarwal, Padmaja Guggilla
Aineistotyyppi:	Artigo
Kieli:	Inglês
Julkaistu:	Springer 2026-05-01
Sarja:	Discover Electronics
Aiheet:	MIS structured Schottky diodes Interfacial layer Charge carriers Potential barrier
Linkit:	https://doi.org/10.1007/s44291-026-00216-9
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