High-Temperature Electrical Transport Behavior of p-Doped Boron Diamond Film/n-WS<sub>2</sub> Nanosheet Heterojunction
WS<sub>2</sub> is a promising material for applications in wearable devices, field-effect transistors, and high-performance heterojunctions. However, significant challenges remain regarding effective regulation and temperature stability. This study investigates the temperature-dependent electrical p...
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| Principais autores: | , , , , , |
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| Format: | Artigo |
| Sprog: | Inglês |
| Udgivet: |
MDPI AG
2025-12-01
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| Serier: | Nanomaterials |
| Fag: | |
| Online adgang: | https://www.mdpi.com/2079-4991/15/24/1900 |
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