Interface and electromagnetic effects in the valley splitting of Si quantum dots
The performance and scalability of silicon spin qubits depend directly on the value of the conduction band valley splitting (VS). In this work, we investigate the influence of electromagnetic fields and the interface width on the VS of a quantum dot in a Si/SiGe heterostructure. We propose a new thr...
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| Autori principali: | , |
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| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
IOP Publishing
2023-01-01
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| Serie: | Materials for Quantum Technology |
| Soggetti: | |
| Accesso online: | https://doi.org/10.1088/2633-4356/acd743 |
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