Deep Sight of Temperature‐Dependent Wake‐Up Effect of Hf0.5Zr0.5O2 Capacitors and Characterization

ABSTRACT Doped HfO2 ferroelectrics have attracted significant attention owing to their compatibility with CMOS processes in memory applications. The evolution of phases in doped HfO2 films during the wake‐up process remains a subject of ongoing interest. Using precession electron diffraction (PED),...

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Principais autores:	Zichong Zhang, Rui Su, Wenxi Zhou, Xiaolong Jing, Tonghui Lin, Yifan Yang, Bobo Tian, Xiangshui Miao, Xingsheng Wang
Formato:	Artigo
Idioma:	Inglês
Publicado em:	Wiley-VCH 2026-06-01
coleção:	Advanced Electronic Materials
Assuntos:	Hf0.5Zr0.5O2 (HZO) capacitor polarization temperature wake‐up effect
Acesso em linha:	https://doi.org/10.1002/aelm.202500752
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