The Effect of Thermal Annealing on the Diffusion Profile of Nickel in GaAs Substrates
Diffusion of nickel in GaAs has been studied at 950ºC. The diffusion wasenhanced during limited interval and for different quantities of As. Nickel atomshad diffused in the beginning due to the interstitial movement of atoms but largenumber of nickel atoms occupies substantial locations in p-type Ga...
Gardado en:
| Autor Principal: | |
|---|---|
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado: |
Unviversity of Technology- Iraq
2009-03-01
|
| Series: | Engineering and Technology Journal |
| Assuntos: | |
| Acceso en liña: | https://etj.uotechnology.edu.iq/article_29284_15b6164ef8dd3852fb8f995edee22b04.pdf |
| Tags: |
Sen Etiquetas, Sexa o primeiro en etiquetar este rexistro!
|