Room-Temperature Voltage Stressing Effects on Resistive Switching of Conductive-Bridging RAM Cells with Cu-Doped SiO2 Films
SiO2 or Cu-doped SiO2 (Cu:SiO2) insulating films combined with Cu or W upper electrodes were constructed on the W/Si substrates to form the conductive-bridging RAM (CB-RAM) cells. The CB-RAMs were then subjected to a constant-voltage stressing (CVS) at room temperature. The experimental results show...
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| Autors principals: | , |
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| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Wiley
2014-01-01
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| Col·lecció: | Advances in Materials Science and Engineering |
| Accés en línia: | http://dx.doi.org/10.1155/2014/594516 |
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