Responsivity Enhanced NMOSFET Photodetector Fabricated by Standard CMOS Technology
Increasing the responsivity is one of the important issues for a photodetector. In this paper, we demonstrate an improved NMOSFET photodetector by using deep-n-well (DNW) structure which can improve the responsivity of the photodetector significantly. The experimental results show that the responsiv...
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| Principais autores: | , , |
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| Format: | Artigo |
| Sprog: | Inglês |
| Udgivet: |
Wiley
2015-01-01
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| Serier: | Advances in Condensed Matter Physics |
| Online adgang: | http://dx.doi.org/10.1155/2015/639769 |
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