Electronic materials with a wide band gap: recent developments
The development of semiconductor electronics is reviewed briefly, beginning with the development of germanium devices (band gap Eg = 0.66 eV) after World War II. A tendency towards alternative materials with wider band gaps quickly became apparent, starting with silicon (Eg = 1.12 eV). This improved...
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| Autor principal: | |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
International Union of Crystallography
2014-09-01
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| coleção: | IUCrJ |
| Assuntos: | |
| Acesso em linha: | http://scripts.iucr.org/cgi-bin/paper?S2052252514017229 |
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