Optimization of Projected Phase Change Memory for Analog In‐Memory Computing Inference

Abstract Phase change memory (PCM) is one of the most promising candidates for non‐von Neumann based analog in‐memory computing–particularly for inference of previously‐trained deep neural networks (DNN). It is shown that PCM electrical properties can be tuned systematically using a projection liner...

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Detalhes bibliográficos

Principais autores:	Ning Li, Charles Mackin, An Chen, Kevin Brew, Timothy Philip, Andrew Simon, Iqbal Saraf, Jin‐Ping Han, Syed Ghazi Sarwat, Geoffrey W. Burr, Malte Rasch, Abu Sebastian, Vijay Narayanan, Nicole Saulnier
Formato:	Artigo
Idioma:	Inglês
Publicado em:	Wiley-VCH 2023-06-01
coleção:	Advanced Electronic Materials
Assuntos:	deep neural network in‐memory computing non‐volatile memory phase change memory resistance drift
Acesso em linha:	https://doi.org/10.1002/aelm.202201190
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