Theoretical Investigation of Fundamental Inherent Physical and Optoelectronic Properties of ZnSnSb2 Chalcopyrite Semiconductor
Here in, we have investigated fundamental inherent physical properties like as structural, electronic, optical, elastic, thermal etc of the ZnSnSb2 by using the accurate full potential linearized augmented plane wave (FP-LAPW) method. These materials have higher energy gaps and lower melting points...
Kaydedildi:
| Asıl Yazarlar: | , , , |
|---|---|
| Materyal Türü: | Artigo |
| Dil: | Inglês |
| Baskı/Yayın Bilgisi: |
V.N. Karazin Kharkiv National University Publishing
2020-02-01
|
| Seri Bilgileri: | East European Journal of Physics |
| Konular: | |
| Online Erişim: | https://periodicals.karazin.ua/eejp/article/view/14676 |
| Etiketler: |
Etiket eklenmemiş, İlk siz ekleyin!
|