Considerable Enhancement of Field Emission of SnO₂Nanowires by Post-Annealing Process in Oxygen at High Temperature

<p>Abstract</p> <p>The field emission properties of SnO₂nanowires fabricated by chemical vapor deposition with metallic catalyst-assistance were investigated. For the as-fabricated SnO₂nanowires, the turn-on and threshold field were 4.03 and 5.4 V/&#956;m, respectively. Conside...

Fuld beskrivelse

Bibliografiske detaljer

Principais autores:	Fang XS, Tang CC, Bando Y, Wang JB, Li K, Zhong XL, Zhou YC
Format:	Artigo
Sprog:	Inglês
Udgivet:	SpringerOpen 2009-01-01
Serier:	Nanoscale Research Letters
Fag:	SnO<sub>2</sub>nanowires Chemical vapor deposition Field emission Annealing
Online adgang:	http://dx.doi.org/10.1007/s11671-009-9367-x
Tags:	Tilføj Tag Ingen Tags, Vær først til at tagge denne postø!