1 200 V Hybrid SiC Power Module with Low Stray Inductance
In order to realize low stray inductance package of 1 200 V hybrid Silicon Carbide (SiC) power module, the measures were taken including selecting optimum chips, optimizing chip layout and replacing bridge joint with low inductance busbar, so that the stray inductance decreased to 16 nH in the power...
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| 主要な著者: | , , , , |
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| フォーマット: | Artigo |
| 言語: | Chinês |
| 出版事項: |
Editorial Office of Control and Information Technology
2016-01-01
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| シリーズ: | Kongzhi Yu Xinxi Jishu |
| 主題: | |
| オンライン･アクセス: | http://ctet.csrzic.com/thesisDetails#10.13889/j.issn.2095-3631.2016.05.015 |
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