Terahertz light-emitting graphene-channel transistor toward single-mode lasing
A distributed feedback dual-gate graphene-channel field-effect transistor (DFB-DG-GFET) was fabricated as a current-injection terahertz (THz) light-emitting laser transistor. We observed a broadband emission in a 1–7.6-THz range with a maximum radiation power of ~10 μW as well as a single-mode emiss...
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| Auteurs principaux: | , , , , , , , , , , |
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| Format: | Artigo |
| Langue: | Inglês |
| Publié: |
Wiley
2018-03-01
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| Collection: | Nanophotonics |
| Sujets: | |
| Accès en ligne: | https://doi.org/10.1515/nanoph-2017-0106 |
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