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Layer-polarized anomalous Hall effect in the MnBi2Te4/In2Se3 (In2Te3) heterostructures

The layer-polarized anomalous Hall effect has emerged as a novel phenomenon in the field of condensed matter physics, holding significant promise for future applications in designing low-dissipation devices. Currently, the layer-polarized anomalous Hall effect has been theoretically predicted or exp...

Ausführliche Beschreibung

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Bibliografische Detailangaben
Hauptverfasser: Hong Xu, Xuqi Li, Haidan Sang, Yu Zhang, Wenying Mu, Shifei Qi
Format: Artigo
Sprache:Inglês
Veröffentlicht: Elsevier 2024-09-01
Schriftenreihe:Materials Today Quantum
Schlagworte:
Online-Zugang:http://www.sciencedirect.com/science/article/pii/S295025782400012X
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