Toward Reliable Metal Halide Perovskite FETs: From Electronic Structure and Device Physics to Stability and Performance Engineering

ABSTRACT Metal halide perovskite field‐effect transistors (PeFETs) have rapidly gained recognition as leading candidates for next‐generation electronic and optoelectronic technologies, owing to their exceptional optoelectronic properties, facile solution processability, and notable mechanical flexib...

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Autors principals:	Georgios Chatzigiannakis, Anastasia Soultati, Leonidas C. Palilis, Ermioni Polydorou, Konstantinos Davazoglou, Petros‐Panagis Filippatos, Goutham Raj Perumallapelli, Ravindra Naik Bukke, Abd. Rashid bin Mohd Yusoff, Ilhwan Ryu, Peng Gao, Alexander Chroneos, Mohammad Khaja Nazeeruddin, Maria Vasilopoulou
Format:	Artigo
Idioma:	Inglês
Publicat:	Wiley-VCH 2026-04-01
Col·lecció:	Advanced Electronic Materials
Matèries:	perovskite field‐effect transistors metal halide perovskites high mobility ion migration compositional engineering low hysteresis
Accés en línia:	https://doi.org/10.1002/aelm.202500568
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