Enhance the Properties of BiI3‐Based Resistive Switching Devices via Mixing Ag and Au Electrodes

Abstract The correlation between the electrodes and the properties of the BiI3 device is systematically investigated. The X‐ray and UV photoemission spectroscopies are carried out to study the chemical state and electronic structure of the metal/BiI3 interfaces formed by the in‐situ deposition of Bi...

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Autors principals:	Chia‐Shuo Li, Yu‐Tien Wu, Po‐Feng Lin, Bo‐You Chen, Fang‐Yu Fu, Ju‐Feng Cheng, Yu‐Song Chang, I‐Chih Ni, Yu‐Kuei Hsu, Yi‐Hao Pai, Mei‐Hsin Chen
Format:	Artigo
Idioma:	Inglês
Publicat:	Wiley-VCH 2023-03-01
Col·lecció:	Advanced Materials Interfaces
Matèries:	bismuth iodide metal substrates multistate data‐storage resistive random‐access memory
Accés en línia:	https://doi.org/10.1002/admi.202202188
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