Ferroelectric Memory Based on Topological Domain Structures: A Phase Field Simulation
The low storage density of ferroelectric thin film memory currently limits the further application of ferroelectric memory. Topologies based on controllable ferroelectric domain structures offer opportunities to develop microelectronic devices such as high-density memories. This study uses ferroelec...
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| Автори: | , , , |
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| Формат: | Artigo |
| Мова: | Inglês |
| Опубліковано: |
MDPI AG
2022-05-01
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| Серія: | Crystals |
| Предмети: | |
| Онлайн доступ: | https://www.mdpi.com/2073-4352/12/6/786 |
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