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Features of mechanisms of electrical conductivity of semiconductor solid solution Zr1-xAlxNiSn

The structural, electrokinetic, energetic, and magnetic properties of the semiconductor solid solution Zr1-xAlxNiSn, obtained by doping the half-Heusler phase n-ZrNiSn with Al atoms by substituting Zr atoms in the 4a position, were investigated. It was established that Al atoms can occupy different...

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Autori principali: V.A. Romaka, Yu. Stadnyk, L. Romaka, A. Horyn, P. Demchenko, P. Haraniuk
Natura: Artigo
Lingua:Inglês
Pubblicazione: Vasyl Stefanyk Carpathian National University 2026-06-01
Serie:Фізика і хімія твердого тіла
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Accesso online:https://journals.pnu.edu.ua/index.php/pcss/article/view/8886
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