Conjoint use of Naphthalene Diimide and Fullerene Derivatives to Generate Organic Semiconductors for n–type Organic Thin Film Transistors

Abstract In this paper, we described the design, synthesis, and characterization of two novel naphthalene diimide (NDI) core‐based targets modified with terminal fullerene (C60) yield – so called S4 and S5, in which NDI bearing 1 and 2 molecules of C60, respectively. The absorption, electrochemical...

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Номзүйн дэлгэрэнгүй

Үндсэн зохиолчид:	Shailesh S. Birajdar, Samantha Brixi, Dr. Pedada Srinivasa Rao, Dr. Rajesh S. Bhosale, Dr. Mohammad Al Kobaisi, Dr. Akhil Gupta, Prof. Benoît H. Lessard, Dr. Sidhanath V. Bhosale, Prof. Sheshanath V. Bhosale
Формат:	Artigo
Хэл сонгох:	Inglês
Хэвлэсэн:	Wiley-VCH 2021-04-01
Цуврал:	ChemistryOpen
Нөхцлүүд:	UV/Vis absorption electrochemical processes fullerenes naphthalene diimide thin-film transistor
Онлайн хандалт:	https://doi.org/10.1002/open.202000230
Шошгууд:	Шошго нэмэх Шошго байхгүй, Энэхүү баримтыг шошголох эхний хүн болох!