Effects of multiple elastic and inelastic scattering on energy-resolved contrast in Kikuchi diffraction
Energy-resolved Kikuchi patterns for silicon crystals were measured for 30 keV electrons in a reflection geometry. The amount of contrast seen depends strongly on both the geometry and the energy loss. For geometries where the outgoing trajectory is glancing with the surface, the contrast is maximum...
Tallennettuna:
| Päätekijät: | , |
|---|---|
| Aineistotyyppi: | Artigo |
| Kieli: | Inglês |
| Julkaistu: |
IOP Publishing
2019-01-01
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| Sarja: | New Journal of Physics |
| Aiheet: | |
| Linkit: | https://doi.org/10.1088/1367-2630/ab5cd1 |
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