Thermal Design and Simulation of High Power Press-pack IGBT Module
With the improvement of packaging power level of IGBT module, power density and operating temperature on chip will rise, which may lead to an increasing affect of thermal stress on long-term reliability of the device. Taking 3 300 V/3 000 A press-pack IGBT module as example, it studied thermal resis...
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| Główni autorzy: | , , |
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| Format: | Artigo |
| Język: | Chinês |
| Wydane: |
Editorial Office of Control and Information Technology
2016-01-01
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| Seria: | Kongzhi Yu Xinxi Jishu |
| Hasła przedmiotowe: | |
| Dostęp online: | http://ctet.csrzic.com/thesisDetails#10.13889/j.issn.2095-3631.2016.06.005 |
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