Distinguishing the Charge Trapping Centers in CaF<sub>2</sub>-Based 2D Material MOSFETs
Crystalline calcium fluoride (CaF<sub>2</sub>) is drawing significant attention due to its great potential of being the gate dielectric of two-dimensional (2D) material MOSFETs. It is deemed to be superior to boron nitride and traditional silicon dioxide (SiO<sub>2</sub>) because of its larger diele...
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| Asıl Yazarlar: | , , , |
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| Materyal Türü: | Artigo |
| Dil: | Inglês |
| Baskı/Yayın Bilgisi: |
MDPI AG
2024-06-01
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| Seri Bilgileri: | Nanomaterials |
| Konular: | |
| Online Erişim: | https://www.mdpi.com/2079-4991/14/12/1038 |
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