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Geometry–Dependent Magnetoelectric and Exchange Bias Effects of the Nano L–T Mode Bar Structure Magnetoelectric Sensor

The geometry–dependent magnetoelectric (ME) and exchange bias (EB) effects of the nano ME sensor were investigated. The sensor consisted of the Longitudinal–Transverse (L–T) mode bi–layer bar structure comprising the ferromagnetic (FM) and ferroelectric (FE) materials and the anti–ferromagnetic (AFM...

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Detalles Bibliográficos
Principais autores: Treetep Saengow, Rardchawadee Silapunt
Formato: Artigo
Idioma:Inglês
Publicado: MDPI AG 2023-01-01
Series:Micromachines
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Acceso en liña:https://www.mdpi.com/2072-666X/14/2/360
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