Engineering Ferroelectric HZO With n⁺-Si/Ge Substrates Achieving High 2<italic>P_r</italic>=84&#x00A0;<bold>&#x03BC;</bold>C/cm² and Endurance &#x003E;1E11

Metal-Ferroelectric-Metal (MFM) devices possessing high remanent polarizations (<inline-formula> <tex-math notation="LaTeX">$2P_{r}$ </tex-math></inline-formula>) of 84 and <inline-formula> <tex-math notation="LaTeX">$73~\mu $ </tex-math></inline-formula>C/cm2 are demonstrated with nearly epitaxiall...

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Váldodahkkit:	Zefu Zhao, Yun-Wen Chen, Yu-Rui Chen, C. W. Liu
Materiálatiipa:	Artigo
Giella:	Inglês
Almmustuhtton:	IEEE 2024-01-01
Ráidu:	IEEE Access
Fáttát:	Hf0.5Zr0.5O2 HZO epitaxial growth HR-STEM PEALD interfacial energy
Liŋkkat:	https://ieeexplore.ieee.org/document/10531750/
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