A Novel Model of Semiconductor Porosity Medium According to Photo-Thermoelasticity Excitation with Initial Stress
Investigated is a novel model in the photo-thermoelasticity theory that takes into account the impact of porosity and initial stress. A generalized photo-thermoelastic that is initially stressed and has voids is taken into consideration for the general plane strain problem. The solutions for the fun...
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| Autores principales: | , , , , |
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| Formato: | Artigo |
| Lenguaje: | Inglês |
| Publicado: |
MDPI AG
2022-11-01
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| Colección: | Crystals |
| Materias: | |
| Acceso en línea: | https://www.mdpi.com/2073-4352/12/11/1603 |
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